Premium
Recrystallization of Oxygen Ion Implanted Ba 0.7 Sr 0.3 TiO 3 Thin Films
Author(s) -
Liedtke R.,
Hoffmann S.,
Waser R.
Publication year - 2000
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.2000.tb01214.x
Subject(s) - crystallization , amorphous solid , materials science , annealing (glass) , thin film , recrystallization (geology) , carbon film , chemical engineering , oxygen , mineralogy , analytical chemistry (journal) , crystallography , nanotechnology , metallurgy , chemistry , paleontology , organic chemistry , chromatography , engineering , biology
The crystallization behavior of chemical‐solution‐deposited and amorphous Ba 0.7 Sr 0.3 TiO 3 (BST) thin films was analyzed with respect to the evolution of the structural and dielectric properties of the films as a function of the annealing temperature. The amorphous films were produced by oxygen ion implantation into crystalline BST thin films. In the amorphous thin films, the crystallization to the perovskite phase occurred at T = 550°C, whereas the as‐deposited CSD films showed the first crystalline XRD‐reflex only after annealing at T = 650°C. Here a carbon‐rich intermediate phase delayed the crystallization process to higher temperatures.