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Fracture Toughness of a Silicon Nitride/Silicon Carbide Nanocomposite at 1350°C
Author(s) -
Dusza Jan,
Sajgalik Pavol,
Steen Marc
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02287.x
Subject(s) - materials science , fracture toughness , composite material , silicon carbide , silicon nitride , diamond , ceramic , polishing , nanocomposite , silicon , bending , metallurgy , layer (electronics)
The fracture toughness of a hot‐pressed silicon nitride/silicon carbide (Si 3 N 4 /SiC) nanocomposite and reference monolithic Si 3 N 4 has been investigated in four‐point bending at 1350°C in air, using different loading rates (0.01‐1 mm/min). Single‐edge V‐notched bend specimens that were prepared by polishing the notch tip to a radius of <10 µm, using 1 µm diamond paste, were used for the fracture toughness measurement. Slow crack growth (SCG) prior to catastrophic failure was detected at all applied loading rates at 1350°C. The fracture toughness at 1350°C, as calculated using the actual crack size measured on the fracture surface after the bend test, increased in both ceramics with decreasing loading rate and increasing area of the SCG region.