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Process for Buried Metallization in Diamond Film
Author(s) -
Ting JyhMing,
Tang Chi
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02254.x
Subject(s) - diamond , chemical vapor deposition , materials science , composite material , electrical resistivity and conductivity , deposition (geology) , optoelectronics , electrical engineering , geology , paleontology , sediment , engineering
This paper investigates methods of combining chemical vapor deposition diamond growth techniques with a physical vapor deposition technique and an ion‐beam‐enhanced deposition technique, respectively, to produce buried metallization of polycrystalline diamond films. The mechanical and electrical integrity of the insulating and conducting elements following metallization and diamond overgrowth is shown. Both methods are shown to have bonding strength sufficient to withstand tape lift‐off. Diamond overgrowth is also shown, thus enabling buried metallized layers to be created. Electrical resistivity measurements on metallized layers and between metallization separated by diamond films are shown to be sufficient to allow the use of diamond as an insulating interlayer material for multilayer circuit boards.