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Structure and Electronic States of Defects in Spinel of Different Compositions MgO·nAl2O3:Me
Author(s) -
Gritsyna Vasily T.,
AfanasyevCharkin Ivan V.,
Kobyakov Vladimir A.,
Sickafus Kurt E.
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02252.x
Subject(s) - spinel , dopant , impurity , luminescence , materials science , aluminate , ion , doping , absorption (acoustics) , analytical chemistry (journal) , irradiation , crystallography , mineralogy , chemistry , optoelectronics , metallurgy , physics , organic chemistry , chromatography , cement , nuclear physics , composite material
This paper reviews the nature of defects and optical centers in magnesium aluminate spinel. The identification of absorption and luminescence bands was used to investigate the influence of UV and electron irradiation on optical center formation. Crystals examined were nominally pure MgO‐ n Al 2 O 3 crystals with compositions in the series n = 1.0, 1.5, 2.0, and 2.5. MgO·Al 2 O 3 crystals doped with transition‐metal ion dopants were also studied to determine the influence of impurities on the nature and concentration of lattice defects in spinel. Results strongly suggest that absorption bands at 3.78 and 4.15 eV, and luminescence bands near 5 eV, may be attributed to optical centers on antisite defects. It is also apparent that through the introduction of specific amounts of Mn and Cr ions, the concentration of optical centers (which are related to defects such as cation antisites in the spinel structure) can be considerably changed.