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Oxygen Content in ß‐Si3N4 Crystal Lattice
Author(s) -
Kitayama Mikito,
Hirao Kiyoshi,
Tsuge Akira,
Toriyama Motohiro,
Kanzaki Shuzo
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02238.x
Subject(s) - oxygen , crystal structure , lattice (music) , materials science , chemical vapor deposition , lattice constant , analytical chemistry (journal) , crystallography , crystal (programming language) , chemistry , mineralogy , nanotechnology , diffraction , organic chemistry , programming language , physics , computer science , acoustics , optics
ß‐Si 3 N 4 crystals were obtained through the heat treatment of alpha‐Si 3 N 4 powder with additives, Y 2 O 3 :SiO 2 = 1:2 and 2:1, and subsequent acid treatments that removed the secondary phases. The lattice oxygen contents of these crystals were determined by the hot‐gas extraction method to be 0.258 ± 0.006 and 0.158 ± 0.003 wt% for the additive compositions of Y 2 O 3 :SiO 2 = 1:2 and 2:1, respectively. The oxygen dissolved in the ß‐Si 3 N 4 crystal lattice as much as in the alpha‐Si 3 N 4 crystral lattice prepared by the chemical vapor deposition process and in the AlN crystal lattice that exhibited high thermal conductivity.