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Superplasticity of Silicon Carbide
Author(s) -
Shinoda Yutaka,
Nagano Takayuki,
Gu Hui,
Wakai Fumihiro
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02178.x
Subject(s) - superplasticity , nanocrystalline material , materials science , grain boundary , hot isostatic pressing , metallurgy , grain boundary sliding , nanocrystalline silicon , carbide , transmission electron microscopy , high resolution transmission electron microscopy , silicon carbide , phase (matter) , boron , composite material , silicon , microstructure , nanotechnology , crystalline silicon , chemistry , organic chemistry , amorphous silicon
Nanocrystalline silicon carbide that was doped with boron and carbon (B,C‐SiC) and contained 1 wt% boron additive and 3.5 wt% free carbon was fabricated using hot isostatic pressing under an ultrahigh pressure of 980 MPa and a temperature of 1600°C. The average grain size of the material was 200 nm. The tensile deformation behavior of this material at elevated temperature was investigated. The nanocrystalline B,C‐SiC exhibited superplastic elongation of >140% at a temperature of 1800°C. High‐resolution transmission electron microscopy observation and electron energy‐loss spectroscopy analysis revealed that this nanocrystalline SiC did not have a secondary glassy phase at the grain boundary and the grain boundary had a strong covalent nature, which means that an intergranular glassy phase was not necessary to obtain superplasticity of covalent materials.