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Effect of Deposition Temperature on the Growth of Yttria‐Stabilized Zirconia Thin Films on Si(111) by Chemical Vapor Deposition
Author(s) -
Hwang SangChul,
Shin HyungShik
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02177.x
Subject(s) - yttria stabilized zirconia , thin film , combustion chemical vapor deposition , chemical vapor deposition , cubic zirconia , materials science , deposition (geology) , substrate (aquarium) , chemical engineering , atmospheric temperature range , hybrid physical chemical vapor deposition , carbon film , mineralogy , analytical chemistry (journal) , composite material , nanotechnology , chemistry , ceramic , organic chemistry , geology , paleontology , oceanography , physics , sediment , meteorology , engineering
An experimental study was made on the effect of deposition temperature on the growth of yttria‐stabilized zirconia (YSZ) thin films in the chemical vapor deposition (CVD) process. The YSZ thin films were obtained in a temperature range of 650°–850°C, using β‐diketone chelates and a Si(111) substrate. Dense and mirrorlike YSZ films with uniform thickness were prepared; the deposition rate was 12–20 nm/min at those temperatures. An examination of the crystalline structure of the YSZ films was made, and the appropriate temperature for the growth of c ‐axis‐oriented YSZ thin films using a Si(111) substrate was determined. The quality of the YSZ films was strongly dependent on the deposition temperature. As the temperature increased, the film growth mechanism changed from being controlled by surface reaction to being controlled by gas‐phase diffusion.