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Oxidation Kinetics of Hexagonal‐Shaped Single‐Crystal Silicon Whiskers
Author(s) -
Jiang Honggang,
Zhu Yuntian T.,
Butt Darryl P.
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02157.x
Subject(s) - whiskers , kinetics , scanning electron microscope , materials science , oxide , whisker , silicon , diffusion , oxygen , fiber , hexagonal crystal system , partial pressure , chemical engineering , analytical chemistry (journal) , crystallography , chemistry , composite material , metallurgy , thermodynamics , physics , organic chemistry , quantum mechanics , engineering , chromatography
The oxidation kinetics of hexagonal‐shaped Si whiskers at high temperature were studied. Si whiskers were oxidized at 1000°C under a partial oxygen pressure of 0.14 atm. Oxide thickness was measured using scanning electron microscopy (SEM). A unique model was developed to describe the oxidation kinetics of hexagonal‐shaped fibers. The model takes into account the inward diffusion of oxygen, oxidation reaction at the oxide/Si interface, and the fiber diameter change caused by the molar volume difference between SiO 2 and Si. Comparison of the model with experimental data shows good agreement.