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Photoluminescence Behavior of Manganese‐Doped Zinc Silicate Phosphors
Author(s) -
Sohn KeeSun,
Cho Bonghyun,
Park Hee Dong
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02155.x
Subject(s) - photoluminescence , phosphor , photoluminescence excitation , manganese , dopant , doping , excitation , analytical chemistry (journal) , materials science , zinc , luminescence , absorption edge , silicate , band gap , chemistry , optoelectronics , physics , metallurgy , quantum mechanics , chromatography , organic chemistry
The purpose of the present study is to develop an understanding of the photoluminescence properties of Mn 2+ ‐doped zinc silicate (Zn 2 SiO 4 :Mn) phosphors, which have served as a gree‐emitting phosphor in many industrial applications. Thus, several experimental techniques, such as time‐resolved emission spectra, decay curves, and time‐resolved photoluminescence excitation spectra, have been conducted on Zn 2 SiO 4 :Mn phosphors. The characterization has been performed in terms of dopant concentration. The decay curves, together with the characteristic decay time, in particular, are measured as a function of excitation‐light wavelength, in the range of 200–520 nm. The decay behavior is strongly dependent on the excitation‐light wavelength. The excitation range is categorized into three regimes: the manganese direct excitation range, below the absorption‐edge ( E T ) energy level; the manganese ionization range, from E T to the optical band‐gap energy ( E g ) of Zn 2 SiO 4 ; and the intergap transition range, above the E g energy level.