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Electrical and Optical Properties of Transparent Conducting Homologous Compounds in the Indium–Gallium–Zinc Oxide System
Author(s) -
Moriga Toshihiro,
Kammler Daniel R.,
Mason Thomas O.,
Palmer George B.,
Poeppelmeier Kenneth R.
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02145.x
Subject(s) - gallium , analytical chemistry (journal) , zinc , indium , electrical resistivity and conductivity , conductivity , band gap , materials science , absorption edge , absorption (acoustics) , chemistry , metallurgy , optoelectronics , chromatography , electrical engineering , composite material , engineering
The homologous compounds In 1− x Ga 1+ x O 3 (ZnO) k (where k = 1, 2, or 3) were prepared at a temperature of 1400°C. The solubility limits (as determined via X‐ray diffractometry) were 0.47 < [In]/([In] + [Ga]) < 0.67 for the k = 1 member, 0.35 < [In]/([In]+[Ga]) < 0.77 for the k = 2 member, and 0.29 < [In]/([In]+[Ga]) < 1.00 for the k = 3 member. Four‐point‐conductivity and diffuse‐reflectance measurements were performed on as‐fired and reduced samples. The band gap that was determined from diffuse reflectance increased as the Ga 3+ content increased and k decreased. The conductivity increased as k decreased and the In 3+ content increased. A maximum conductivity of 250 S/cm was obtained for k = 3 and [In]/([In]+[Ga]) = 1 after reduction. The minimum absorption edge of 325 nm was obtained for k = 2 and [In]/([In]+[Ga]) = 0.35 prior to reduction. The potential for metastable phases in the In‐Ga‐Zn‐O system with enhanced transparent‐conducting properties has been discussed.