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Physical and Dielectric Properties of (1– x )PbZrO 3 · x BaTiO 3 Thin Films Prepared by Chemical Solution Deposition
Author(s) -
Park Jeong Hwan,
Yoon Ki Hyun,
Kang Dong Heon
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02142.x
Subject(s) - dielectric , ferroelectricity , materials science , thin film , analytical chemistry (journal) , perovskite (structure) , phase boundary , microstructure , mineralogy , antiferroelectricity , phase (matter) , crystallography , composite material , chemistry , nanotechnology , optoelectronics , organic chemistry , chromatography
Physical and dielectric properties of (1– x )PbZrO 3 · x BaTiO 3 thin films prepared by a chemical coating process have been investigated as a function of BaTiO 3 ( x ) content (0≤ x ≤0.2). Changing the molar ratio between propylene glycol and water prior to the deposition optimized the chemical precursors. (1– x )PbZrO 3 ‐ x BaTiO 3 thin films that contained a majority of perovskite phase, but also contained large amounts of other phases, were fabricated. These films could withstand fields of 250 kV/cm at 1 kHz. The microstructure of the thin films was found to depend on the BaTiO 3 content. The phase transition from antiferroelectric to ferroelectric was gradually induced as the BaTiO 3 content increased. A maximum dielectric constant of ∼809 was obtained at the composition of x = 0.1. A maximum dielectric constant of ∼809 was obtained at the composition of x = 0.1. A thin film at the low‐field antiferroelectric‐ferroelectric phase boundary with x = 0.05 exhibited the highest P sat and P r values. The maximum values of these were 45 and 31 μC/cm 2 , respectively.