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Cordierite‐Based Dielectric Thick Films on an Oxidized Copper Layer: Microstructural Evidence of Copper Diffusion
Author(s) -
Cho Yong S.,
Hoelzer David T.,
Schulze Walter A.,
Amarakoon Vasantha R. W.
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb02025.x
Subject(s) - cordierite , materials science , crystallization , copper , layer (electronics) , diffusion , diffusion barrier , substrate (aquarium) , microstructure , chemical engineering , barrier layer , dielectric , composite material , mineralogy , metallurgy , chemistry , ceramic , geology , oceanography , physics , engineering , thermodynamics , optoelectronics
Cordierite‐based dielectric thick films deposited by screen‐printing on a Cu 2 O‐Cu‐96% alumina substrate were investigated with regard to microstructural characteristics, densification, and crystallization. Compared to direct deposition of the cordierite layer on metal Cu, the use of the Cu 2 O layer as a diffusion barrier caused the cordierite thick film to become more stable without any significant interaction layer at the film interface after firing at 920°C for 30 min in a N 2 atmosphere. On the other hand, microstructural observation of the cordierite thick films on the Cu 2 O revealed some evidence of Cu diffusion into the cordierite thick films, i.e., incorporation of Cu into the cordierite and remaining glass, and as Cu precipitates. Additionally, the diffused Cu was found to significantly affect densification and crystallization of the thick films, resulting in lower densification and crystallization temperatures. An XRD analysis supported the Cu incorporation from the Cu 2 O layer into the cordierite by showing the disappearance of Cu 2 O phase at 700°C, which is below densification temperature.