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Processing of Oriented K(Ta,Nb)O 3 Films Using Chemical Solution Deposition
Author(s) -
Suzuki Kazuyuki,
Sakamoto Wataru,
Yogo Toshinobu,
Hirano Shinichi
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb01942.x
Subject(s) - materials science , thin film , analytical chemistry (journal) , tantalate , pole figure , chemical composition , perovskite (structure) , mineralogy , crystallography , ferroelectricity , nanotechnology , chemistry , dielectric , optoelectronics , organic chemistry , chromatography
K(Ta,Nb)O 3 (KTN) thin films have been prepared by the chemical solution deposition method. KTN precursors consisted of a uniform mixture of K[Ta(OC 2 H 5 ) 6 ] and K[Nb(OC 2 H 5 ) 6 ] with interaction at the molecular level. Perovskite KTN thin films with the desired composition (Ta/Nb = 65/35, 50/50, and 35/65) were synthesized from the precursor solutions by the dip coating method. KTN thin films with (100) preferred orientation were successfully synthesized on MgO(100) and Pt(100)/MgO(100) substrates. X‐ray pole figure measurements showed that grains of KTN films had a prominent three‐dimensional regularity on MgO(100) and Pt(100)/MgO(100) surfaces. The Curie temperatures of KTN films decreased with increasing Ta/Nb ratio. Typical P‐E hysteresis loops were observed for KTN thin films of three compositions on Pt(100)/MgO(100) substrates. The values of remanent polarization ( P r ) of KTN films increased as the Ta/Nb ratio changed from 65/35 to 35/65.