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New Synthetic Method of Forming Aluminum Oxynitride by Plasma Arc Melting
Author(s) -
Fukuyama Hiroyuki,
Nakao Wataru,
Susa Masahiro,
Nagata Kazuhiro
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb01927.x
Subject(s) - materials science , plasma , evaporation , aluminium , arc (geometry) , nanoscopic scale , nitrogen , plasma arc welding , melting temperature , chemical engineering , metallurgy , composite material , nanotechnology , thermodynamics , chemistry , physics , geometry , mathematics , organic chemistry , quantum mechanics , welding , engineering
A new synthetic method of forming the gamma‐phase of aluminum oxynitride (alon) has been proposed. alon has been successfully synthesized by the DC nitrogen plasma arc using alpha‐Al 2 O 3 and AlN as starting materials. Alon rapidly forms in a liquid state under thermal plasma. The obtained lattice parameter of alon has been determined as a function of the concentration of Al 2 O 3 . Evaporation takes place during arc melting. The condensed alon from the vapor consists of nanoscale‐sized spherical particles, and these particles are in single crystals. The evaporation mechanism of alon during arc melting is discussed. Thus, arc plasma processing is a promising method for synthesizing alon and producing the ultrafine powder.