Premium
Deep Reactive Ion Etching of Lead Zirconate Titanate Using Sulfur Hexafluoride Gas
Author(s) -
Wang Shinan,
Li Xinghua,
Wakabayashi Katsuhiro,
Esashi Masayoshi
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb01919.x
Subject(s) - lead zirconate titanate , materials science , etching (microfabrication) , reactive ion etching , sulfur hexafluoride , zirconate , ceramic , analytical chemistry (journal) , metallurgy , titanate , composite material , ferroelectricity , optoelectronics , chemistry , organic chemistry , layer (electronics) , chromatography , dielectric
A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF 6 ) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O 3 , PZT) three‐dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow‐gap vacuum chamber. The etch depth was 70 µm with a maximum etch rate of 0.3 µm/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ∼75°. Both positive RIE lag and unexpected ultrafine‐slit etching phenomena were observed.