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Diamond‐Coated Silicon Carbide Whiskers
Author(s) -
Demkowicz Paul A.,
Bell Nelson S.,
Gilbert Don R.,
Singh Rajiv,
Drawl William R.,
Adair James H.
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb01880.x
Subject(s) - whiskers , diamond , materials science , silicon carbide , chemical vapor deposition , chemical vapor infiltration , material properties of diamond , scanning electron microscope , composite material , whisker , silicon , coating , porosity , crystallite , mineralogy , nanotechnology , metallurgy , chemistry
Colloidal techniques have been used to seed SiC whiskers with submicrometer‐sized diamond particles. The diamond and SiC particulates are co‐suspended in an aqueous medium and cast to form highly porous bodies. Electron cyclotron resonance chemical vapor deposition is used to grow dense, polycrystalline diamond coatings on the seeded whiskers. The low packing density of the cast green bodies allows for infiltration of the growth zone beneath the exposed surface. Electron microscopy is used to estimate the coating thickness and depth of growth infiltration.