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Process‐Structure‐Reflectance Correlations for TiB 2 Films Prepared by Chemical Vapor Deposition
Author(s) -
Beckloff Bruce N.,
Lackey W. Jack
Publication year - 1999
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1999.tb01794.x
Subject(s) - deposition (geology) , chemical vapor deposition , materials science , crystallite , substrate (aquarium) , coating , graphite , grain size , analytical chemistry (journal) , carbon film , thin film , chemical engineering , mineralogy , metallurgy , composite material , chemistry , nanotechnology , organic chemistry , paleontology , oceanography , sediment , geology , engineering , biology
The process‐structure‐reflectance interrelationships for TiB 2 films prepared by CVD were determined using statistically designed experiments. A hot wall CVD reactor employing graphite substrates and the TiCl 4 + BCl 3 + H 2 reagent system were used at pressures of 2.7 and 6.7 kPa. Single‐phase polycrystalline TiB 2 films were obtained. An increasing percentage of the grains were oriented with their (001) planes parallel to the substrate as the deposition temperature was increased and as the BCl 3 :TiCl 4 ratio decreased. Grain size increased from ∼0.5 to 3 µm as the deposition temperature was increased from 900° to 1100°C and as the coating rate was decreased from 0.6 to 0.1 µm/min. Fine‐grained, smooth, highly reflective films were obtained at low deposition temperatures and high BCl 3 :TiCl 4 ratios.