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Subsolidus Phase Relations in the Ga 2 O 3 ‐In 2 O 3 ‐SnO 2 System
Author(s) -
Edwards Doreen D.,
Mason Thomas O.
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02769.x
Subject(s) - phase (matter) , crystallography , ternary operation , x ray crystallography , atmospheric temperature range , diffraction , ternary numeral system , materials science , analytical chemistry (journal) , chemistry , mineralogy , physics , thermodynamics , optics , organic chemistry , chromatography , computer science , programming language
Subsolidus phase relationships in the Ga 2 O 3 –In 2 O 3 –SnO 2 system were studied by X‐ray diffraction over the temperature range 1250–1400°C. At 1250°C, several phases are stable in the ternary system, including Ga 2 O 3 ( ss ), In 2 O 3 ( ss ), SnO 2 , Ga 3− x In 5+ x Sn 2 O 16 , and several intergrowth phases that can be expressed as Ga 4−4 x In 4 x Sn n −4 O 2 n −2 where n is an integer. An In 2 O 3 –SnO 2 phase and Ga 4 SnO 8 form at 1375°C but are not stable at 1250°C. GaInO 3 did not form over the temperature range 1000–1400°C.