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Ferroelectric Thin Films of Bismuth‐Containing Layered Perovskites: Part II, PbBi 2 Nb 2 O 9
Author(s) -
Du Xiaofeng,
Chen IWei
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02765.x
Subject(s) - aurivillius , materials science , ferroelectricity , bismuth , nucleation , thin film , coercivity , crystallization , pyrochlore , perovskite (structure) , condensed matter physics , crystallography , mineralogy , dielectric , phase (matter) , chemical engineering , nanotechnology , optoelectronics , chemistry , physics , organic chemistry , engineering , metallurgy
Ferroelectric thin films of bismuth‐containing layered perovskite PbBi 2 Nb 2 O 9 have been prepared by a metalorganic decomposition (MOD) method. Random and highly c‐oriented films of the same starting composition have been obtained under different intermediate‐ and high‐temperature heat treatments. A comparison of their crystallization and properties with those of Bi 4 Ti 3 O 12 films reveals similar trends that are common to bismuth‐containing Aurivillius compounds. Heterogeneous nucleation of the perovskite phase either on the pyrochlore (444) plane because of lattice matching or on the substrate surface because of lower interfacial energy is proposed as the cause of orientation selection during crystallization. The different thickness of the pseudoperovskite subunits in these layered compounds may be responsible for the systematic difference in the anisotropic ferroelectric properties. Smaller polarization and higher coercive field are expected for PbBi 2 Nb 2 O 9 , which has thinner pseudoperovskite units than Bi 4 Ti 3 O 12 .