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Microstructural Characterization of Superplastic SiO 2 ‐doped TZP with a Small Amount of Oxide Addition
Author(s) -
Thavorniti Parjaree,
Ikuhara Yuichi,
Sakuma Taketo
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02715.x
Subject(s) - materials science , superplasticity , grain boundary , doping , amorphous solid , microstructure , scanning electron microscope , phase (matter) , oxide , electron energy loss spectroscopy , ductility (earth science) , grain growth , chemical engineering , analytical chemistry (journal) , composite material , mineralogy , metallurgy , crystallography , nanotechnology , transmission electron microscopy , chemistry , optoelectronics , chromatography , creep , organic chemistry , engineering
The microstructures of 5 wt% SiO 2 ‐doped TZP, 5 wt% (SiO 2 + 2 wt% MgO)‐doped TZP, and 5 wt% (SiO 2 + 2 wt% Al 2 O 3 )‐doped TZP are characterized by high‐resolution electron microscopy, energy‐dispersive X‐ray spectroscopy, and electron energy loss spectroscopy. An amorphous phase is formed at multiple grain junctions but not along the grain‐boundary faces in these three materials. A small addition of MgO and Al 2 O 3 into the SiO 2 phase results in a marked reduction in tensile ductility of SiO 2 ‐doped TZP. This reduction seems to correlate with segregation of magnesium or aluminum ions at grain boundaries and a resultant change in the chemical bonding state.