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Oxidation of Chemically‐Vapor‐Deposited Silicon Carbide in Carbon Dioxide
Author(s) -
Opila Elizabeth J.,
Nguyen QuynhGiao N.
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02573.x
Subject(s) - thermogravimetric analysis , silicon carbide , carbon dioxide , water vapor , oxygen , chemical vapor deposition , silicon dioxide , combustion , materials science , chemical engineering , carbon fibers , inorganic chemistry , silicon , chemistry , analytical chemistry (journal) , nanotechnology , organic chemistry , composite material , metallurgy , composite number , engineering
Chemically‐vapor‐deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO 2 ) at temperatures of 1200–1400°C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate‐limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO 2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.