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Dislocations and Stacking Faults in Ti 3 SiC 2
Author(s) -
Farber Leonid,
Barsoum Michel W.,
Zavaliangos Antonios,
ElRaghy Tamer,
Levin Igor
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02532.x
Subject(s) - stacking , materials science , partial dislocations , crystallography , transmission electron microscopy , grain boundary , condensed matter physics , dislocation , basal plane , planar , carbide , ternary operation , composite material , microstructure , nanotechnology , chemistry , physics , computer graphics (images) , organic chemistry , computer science , programming language
The ternary carbide Ti 3 SIC 2 fabricated by a reactive hot‐press route is investigated by transmission electron microscopy. The material consists mainly of large elongated grains with planar boundaries, and is characterized by a low defect density. Dislocations are observed in the grains and at grain boundaries. Perfect dislocations with b = 1/3<1120> lying in (0001) basal planes are present. These basal plane dislocations are mobile and multiply as a result of room‐temperature deformation. All of the stacking faults observed lie in the basal planes.