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Dielectric Properties of Complex Perovskite Lead Scandium Tantalate under dc Bias
Author(s) -
Chu Fan,
Fox Glen R.,
Setter Nava
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02519.x
Subject(s) - ferroelectricity , dielectric , materials science , condensed matter physics , dc bias , perovskite (structure) , curie temperature , ferroelectric ceramics , scandium , phase transition , crystallography , chemistry , optoelectronics , ferromagnetism , physics , quantum mechanics , voltage , metallurgy
The weak‐field dielectric properties of ordered, disordered, and lead‐deficient disordered Pb(Sc 0.5 Ta 0.5 )O 3 (PST) ceramics (PST‐O, PST‐D, and PST‐DV, respectively) were investigated under various dc‐bias conditions. The dc‐bias field influences the paraelectric‐to‐ferroelectric transition in PST‐O and the relaxor‐to‐normal‐ferroelectric transition in disordered PST‐D. Phase diagrams, with respect to dc bias and temperature, were proposed for ordered and disordered PST materials. A field‐induced ferroelectric state that originated from the residual non‐ordered regions in PST‐O was revealed by analyzing the Curie‐Weiss behavior of the materials under bias. It is shown that, in PST‐DV, a dc bias cannot induce an abrupt ferroelectric‐to‐relaxor transition. A dielectric anomaly observed at low temperatures in all three types of PST materials is attributed to a poling process.