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Phase Relationships and Physical Properties of Homologous Compounds in the Zinc Oxide‐Indium Oxide System
Author(s) -
Moriga Toshihiro,
Edwards Doreen D.,
Mason Thomas O.,
Palmer George B.,
Poeppelmeier Kenneth R.,
Schindler Jon L.,
Kannewurf Carl R.,
Nakabayashi Ichiro
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02483.x
Subject(s) - annealing (glass) , conductivity , zinc , indium , analytical chemistry (journal) , electrical resistivity and conductivity , homologous series , oxide , materials science , atmospheric temperature range , chemistry , metallurgy , crystallography , thermodynamics , physics , chromatography , electrical engineering , engineering
Equilibrium phase relationships in the ZnO‐In 2 O 3 system were determined between 1100° and 1400°C using solid‐state reaction techniques and X‐ray diffractometry. In addition to ZnO and In 2 O 3 , nine homologous compounds, Zn k In 2 O k +3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 400°C for 1 h under forming gas (4% 2 ‐96% N 2 ). Room‐temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450‐900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room‐temperature conductivity measured, 270 S/cm, was that of reduced Zn 3 In 2 O 6 .