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Preparation and Dielectric Properties of Low‐Temperature‐Sinterable (Zr 0.8 Sn 0.2 )TiO 4 Powder
Author(s) -
Han Kyoung R.,
Jang JinWook,
Cho SeoYong,
Jeong DaeYong,
Hong KugSun
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02470.x
Subject(s) - sintering , materials science , microstructure , scanning electron microscope , dielectric , transmission electron microscopy , ceramic , mineralogy , phase (matter) , analytical chemistry (journal) , grain size , chemical engineering , composite material , nanotechnology , chemistry , optoelectronics , organic chemistry , engineering , chromatography
Low‐temperature‐sinterable (Zr 0.8 Sn 0.2 )TiO 4 powders were prepared using 3 mol% Zn(NO 3 ) 2 additive and then compared with powders prepared using 3 mol% ZnO additive and no additives. Sintering at 1200°C for 2 h produced a dielectric ceramic with ρ= 98.6% of theoretical density (TD), ɛ r = 38.4, Q × f (GHz) = 42000, and τ f =−1 ppm/°C. Sintering at 1250°C resulted in an excellent dielectric with ρ= 99% of TD, epsilon r = 40.9, Q × f (GHz) = 49000, and τ f =−2 ppm/°C. Scanning electron microscopy showed a microstructure with grains measuring 0.5 to 1 μm, and transmission electron microscopy revealed secondary phase in the grain boundaries.