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Characterization of Lead Oxide Thin Films Produced by Chemical Vapor Deposition
Author(s) -
Madsen Lynnette D.,
Weaver Louise
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02436.x
Subject(s) - chemical vapor deposition , auger electron spectroscopy , lead oxide , thin film , combustion chemical vapor deposition , metalorganic vapour phase epitaxy , nucleation , scanning electron microscope , oxide , raman spectroscopy , annealing (glass) , chemical engineering , materials science , chemistry , layer (electronics) , analytical chemistry (journal) , nanotechnology , carbon film , epitaxy , metallurgy , organic chemistry , optics , physics , engineering , nuclear physics , composite material
As a step toward creating a chemical vapor deposition (CVD) process for PbTiO 3 thin films, lead oxide films were deposited and then examined. The reaction was oxidation controlled, with an apparent activation energy of 97 kJ/mol in this low‐temperature, low‐pressure metalorganic CVD (MOCVD) process. Across the deposition parameters examined, several distinct types of morphology were observed. Growth occurred as a combination of layer‐on‐layer and island formation. The structural and chemical properties of the lead oxide were examined by Auger electron spectroscopy, Raman spectroscopy, X‐ray diffraction, scanning electron microscopy, and electron diffraction. Various forms of lead oxide were produced (litharge, massicot, and scrutinyite, singly or in combination with each other). The deposition parameters used in this work showed a tendency to maintain the same crystalline form from the initial nucleation stages through post‐deposition annealing. Lead oxide formed readily on SiO 2 surfaces (contrary to studies by other researchers) and, indeed, reacted with the underlying SiO 2 layer.