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Interface Nanostructure of Brazed Silicon Nitride
Author(s) -
Iwamoto Chihiro,
Tanaka Shunichiro
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02342.x
Subject(s) - tin , materials science , brazing , silicon nitride , ceramic , transmission electron microscopy , titanium nitride , nanostructure , nitride , silicon , alloy , crystallography , nanoparticle , nanotechnology , metallurgy , chemistry , layer (electronics)
Nanomorphologies and crystallographic orientations of the brazed interface of silicon nitride (Si 3 N 4 ) were analyzed via high‐resolution transmission electron microscopy. When Si 3 N 4 was brazed using an Ag‐Cu‐Ti alloy, titanium nitride (TiN) nanoparticles were formed adjacent to the ceramic as reaction products, and these nanoparticles were commonly accompanied by C‐phase material. The structure of Si 3 N 4 /TiN interface was wavy on an atomic scale, which was considered to provide anchoring points that offered high mechanical strength. The TiN nanoparticles extended along the [0001] axis of Si 3 N 4 . The orientation relationship between TiN and ß‐Si 3 N 4 was, as determined from the observed lattice images, that the [110] direction of TiN was parallel to the [0001] direction of Si 3 N 4 . The nature of the crystallographic relationships and interface nanomorphologies were also discussed.