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Silicon Carbide Membranes Modified by Chemical Vapor Deposition Using Species of Low Sticking Coefficients in a Silane/Acetylene Reaction System
Author(s) -
Lee LangLuen,
Tsai DahShyang
Publication year - 1998
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1998.tb02308.x
Subject(s) - permeance , chemical vapor deposition , acetylene , membrane , silane , chemical engineering , materials science , deposition (geology) , chemistry , analytical chemistry (journal) , nanotechnology , composite material , organic chemistry , paleontology , permeation , biochemistry , sediment , engineering , biology
Asymmetric SiC membranes are modified by a SiH 4 /C 2 H 2 /Ar low‐pressure chemical vapor deposition (LPCVD) system at a temperature of 800°C. The pore size of the membrane is reduced to increase its selectivity at the expense of its permeance. The chemical vapor deposition (CVD) modification, using a chamber to minimize the gas‐phase reaction, is superior to that without a chamber, because the film‐forming species of low sticking coefficients can improve the pore size at a lower cost of permeance reduction. With the knowledge of pore structure and CVD kinetics, the alteration of membrane properties can be properly predicted.