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Mechanism of Biaxial Alignment of Oxide Thin Films during Ion‐Beam‐Assisted Deposition
Author(s) -
Ressler Kevin G.,
Sonnenberg Neville,
Cima Michael J.
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb03166.x
Subject(s) - ion beam assisted deposition , materials science , electron beam physical vapor deposition , ion beam , yttria stabilized zirconia , evaporation , deposition (geology) , thin film , ion , texture (cosmology) , substrate (aquarium) , ion beam deposition , cubic zirconia , analytical chemistry (journal) , composite material , nanotechnology , chemistry , ceramic , artificial intelligence , image (mathematics) , oceanography , computer science , biology , paleontology , chromatography , thermodynamics , physics , organic chemistry , sediment , geology
The mechanism of biaxial alignment was examined for yttria‐stabilized zirconia (YSZ) and La 1−x Ca x MnO 3 (LCMO) films that were fabricated by ion‐beam‐assisted deposition (IBAD). Films that were deposited with both dual‐ion‐beam deposition and ion‐assisted electron‐beam evaporation were studied. The film texture formation was mostly dependent on the ratio of ion bombardment to molecule arrival and on the angle of the incident ions with respect to the substrate. Results were not dependent on the deposition technique. The observed IBAD YSZ and IBAD LCMO biaxial alignment did not occur because of ion channeling. It has been shown that the preferred film orientation develops because of anisotropy of ion‐induced damage on various crystal surfaces.