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PbTiO 3 –PbO–SiO 2 Glass‐Ceramic Thin Film by a Sol–Gel Process
Author(s) -
Saegusa Kunio
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb03152.x
Subject(s) - materials science , dielectric , thin film , sol gel , ceramic , crystallization , annealing (glass) , glass ceramic , composite material , dielectric loss , permittivity , mineralogy , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , chemistry , chromatography , engineering
PbTiO 3 (PT)‐PbO‐SiO 2 glass‐ceramic thin films were pro‐duced by a sol‐gel process. The crystallization of PT oc‐curred at ∼700°C and was higher than that in PT‐PbO‐B 2 O 3 sol‐gel glass‐ceramics. A pinhole‐free thin film was obtained by a rapid thermal annealing process when the designed glass‐forming phase content in the thin film was >24 vol%. The measured dielectric constants of the films fairly agreed with the predicted values, based on a parallel mixing model. The dielectric constant was 219 and the di‐electric loss was 0.04 in the 0.6PT‐0.4(PbO‐SiO 2 ) film that was fired at 700°C.