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Grain‐Boundary Defect Chemistry of Acceptor‐Doped Titanates: Inversion Layer and Low‐Field Conduction
Author(s) -
Vollmann Markus,
Hagenbeck Rainer,
Waser Rainer
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb03121.x
Subject(s) - acceptor , thermal conduction , grain boundary , doping , ionic conductivity , conductivity , depletion region , chemistry , condensed matter physics , space charge , materials science , mineralogy , layer (electronics) , electrolyte , nanotechnology , crystallography , electrode , composite material , physics , microstructure , electron , quantum mechanics
The electronic and ionic conduction across grain‐boundary (GB) space‐charge depletion layers in acceptor‐doped SrTiO 3 ceramics have been investigated by admittance analysis in the time domain. The dependence on the acceptor concentration, the oxygen partial pressure during equilibration, and the temperature dependence of the GB conductivity are discussed and interpreted in terms of a defect‐chemistry model of the GB region using a numerical simulation technique.