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Minimizing Infiltration Times during Isothermal Chemical Vapor Infiltration with Methyltrichlorosilane
Author(s) -
Chang HanChieh,
Morse Theodore F.,
Sheldon Brian W.
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb03055.x
Subject(s) - chemical vapor infiltration , infiltration (hvac) , isothermal process , chemical vapor deposition , chlorine , chemistry , silicon carbide , materials science , composite number , chemical engineering , composite material , thermodynamics , nanotechnology , organic chemistry , physics , engineering
Minimum infiltration times during isothermal chemical vapor infiltration were calculated for the formation of a silicon carbide matrix composite from methyltrichlorosilane (MTS). Several different reaction models were used to describe the SiC deposition kinetics. The results show that the nature of the reaction model has a significant effect on process optimization considerations. It is clear that a simple first‐order deposition reaction does not accurately describe the infiltration process, while rate expressions that treat the effect of chlorine‐containing byproduct gases provide much more accurate predictions. In theory, much shorter infiltration times can be obtained with precursor chemistries that do not produce Cl‐containing gases. The results also provide guidelines for minimizing infiltration times with MTS.