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Electron Spin Resonance Analysis of Lattice Defects in Polycrystalline Aluminum Nitride
Author(s) -
Nakahata Seiji,
Sogabe Kouichi,
Matsuura Takahiro,
Yamakawa Akira
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb03027.x
Subject(s) - impurity , crystallite , electron paramagnetic resonance , materials science , nitride , oxygen , nitrogen , aluminium , electron , condensed matter physics , lattice (music) , analytical chemistry (journal) , electrical resistivity and conductivity , chemistry , nuclear magnetic resonance , metallurgy , nanotechnology , physics , organic chemistry , engineering , layer (electronics) , quantum mechanics , chromatography , acoustics , electrical engineering
Electron spin resonance was used in the present study to detect lattice defects in an aluminum nitride lattice. The ESR spectra were obtained from polycrystalline AlN with various thermal conductivities. Measurement of the AlN g values clearly indicated that the obtained ESR signals arose from electrons trapped by nitrogen vacancies. The ESR study revealed that thermal conductivity increases with an increase in the number of electrons trapped by nitrogen vacancies. The explanation for that phenomenon is that the thermal conductivity of AlN increases with a decreasing concentration of oxygen impurities incorporated into the AlN lattice, and the concentration of nitrogen vacancies changes inversely with the concentration of oxygen impurities.