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Effect of Oxide Devitrification on Oxidation Kinetics of SiC
Author(s) -
Ogbuji Linus U. J. T.
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb03014.x
Subject(s) - devitrification , oxide , materials science , crystallinity , crystallization , silicon carbide , amorphous solid , chemical engineering , kinetics , argon , thermal oxidation , oxygen , inorganic chemistry , chemistry , metallurgy , composite material , crystallography , physics , quantum mechanics , engineering , organic chemistry
The effect of oxide crystallinity on the oxidation rate of silicon carbide was investigated. CVD SiC coupons were oxidized in a clean TGA reactor system at 1300°C initially in flowing oxygen, immediately annealed in argon, and then reoxidized, all in situ and without cooling (so as to preserve oxide integrity). The parabolic rate constants determined for the preoxidation regime (of mainly amorphous oxide film) and reoxidation regime (of devitrified oxide) were compared. The oxidation rate decreased by a factor of }30 following full oxide crystallization induced by the anneal.