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Fracture Resistance Behavior of Multilayered Silicon Nitride
Author(s) -
Ohji Tatsuki,
Shigegaki Yasuhiro,
Miyajima Tatsuya,
Kanzaki Shuzo
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb02931.x
Subject(s) - whisker , whiskers , materials science , silicon nitride , porous silicon , composite material , layer (electronics) , fracture (geology) , porosity , nitride , silicon , metallurgy
This paper investigates the fracture resistance behavior of a novel silicon nitride with a unique laminated structure consisting of alternate dense and porous layers, in the latter of which β‐silicon nitride whiskers were aligned parallel to the layer. The R ‐curve was determined by using a chevron–notched–beam technique when a crack propagated in the direction normal to the whisker axis. The resistance markedly increased whenever a crack passed the porous layer, resulting in stepwise rising R–curve behavior. Microscopic study revealed that the aligned whiskers were almost completely pulled out in the porous layer.