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The α–β Transformation in Silicon Nitride Single Crystals
Author(s) -
Suematsu Hisayuki,
Mitomo Mamoru,
Mitchell Terence E.,
Petrovic John J.,
Fukunaga Osamu,
Ohashi Naoki
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb02876.x
Subject(s) - silicon nitride , annealing (glass) , materials science , transformation (genetics) , crystallography , nitride , silicon , precipitation , phase (matter) , chemical engineering , mineralogy , metallurgy , chemistry , nanotechnology , biochemistry , physics , layer (electronics) , engineering , gene , meteorology , organic chemistry
Single crystals of α‐Si 3 N 4 were annealed at 2000°–2150°C. The β phase was detected after annealing at 2150°C only when the crystals were surrounded by MgO·3Al 2 O 3 or Y 2 O 3 powders. On the other hand, no evidence of the α–β transformation was found when the crystals were annealed without additives. The solution–precipitation mechanism was concluded to be the dominant factor in the α–β transformation of Si 3 N 4 .