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Interfacial Reactions between Sapphire and Silver—Copper—Titanium Thin Film Filler Metal
Author(s) -
Suenaga Seiichi,
Nakahashi Masako,
Maruyama Miho,
Fukasawa Takayuki
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb02849.x
Subject(s) - brazing , wetting , materials science , titanium , filler metal , layer (electronics) , copper , metal , filler (materials) , composite material , sapphire , metallurgy , sputtering , thin film , nanotechnology , alloy , laser , physics , arc welding , welding , optics
Wetting and brazing studies of sputtering‐deposited, submicrometer thin film filler metal in an Ag—Cu—Ti/Al 2 O 3 system were performed. The interfacial reaction layer between the filler metal and Al 2 O 3 was investigated. It is possible to make a brazing joint even with a reaction layer of less than 100 nm thickness. Different types of interfacial reaction layers were observed when the Ti content in the filler metal was varied. The Cu—Ti—O system compounds were observed in the samples with high wetting capabilities, but not in the sample with low wetting characteristics. It was found that these compounds are substances that promote effective brazing.