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Preparation and Analysis of a Silicon Carbide Composite Membrane
Author(s) -
Lin PingKun,
Tsai DahShyang
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb02839.x
Subject(s) - sintering , materials science , dopant , weibull modulus , silicon carbide , flexural strength , composite material , substrate (aquarium) , doping , composite number , porosity , oceanography , optoelectronics , geology
Silicon carbide (SiC) porous substrates, containing alumina (Al 2 O 3 ) dopant levels of 3, 5, and 8 wt%, are prepared by slip casting and sintering in the temperature range of 1450°–1800°C. The linear shrinkage, bulk density, and pore size of the sintered substrate increase as the sintering temperature and the amount of dopant increase. A large amount of β‐phase SiC is transformed to α‐phase SiC if the dopant concentration is 5 or 8 wt%. The flexural strength of the substrate doped with 8 wt% Al 2 O 3 is higher than that of the substrate doped with 3 wt% Al 2 O 3 ; however, the Weibull modulus of the former is lower. SiC composite membranes of improved selectivity and strength are fabricated by coating the porous substrate with layers of lower Al 2 O 3 contents at lower sintering temperatures.