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Application of the SIMS Method in Studies of Cr Segregation in Cr‐Doped CoO: I, Aspects of Quantitative Analysis
Author(s) -
Bernasik Andrzej,
Nowotny Janusz,
Scherrer Stanislas,
Weber Sylvian
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb02836.x
Subject(s) - sputtering , analytical chemistry (journal) , calibration , doping , materials science , reproducibility , calibration curve , intensity (physics) , secondary ion mass spectrometry , ion , resolution (logic) , oxide , chemistry , optics , thin film , optoelectronics , nanotechnology , metallurgy , chromatography , detection limit , physics , organic chemistry , artificial intelligence , computer science , quantum mechanics
Aspects of calibration of intensities of SIMS secondary ions vs concentration as well as sputtering time vs depth are considered for Cr‐doped CoO. Advantages and limitations of the SIMS method in quantitative analysis of segregation‐induced concentration profiles in oxide crystals are discussed. The studies indicate a substantial effect due to charging the surface during sputtering. The depth calibration was performed by using the Ta 2 O 5 /Ta system as a standard. Good depth resolution was revealed. The calibration dependence of Cr intensities on concentration is characterized by a wide scatter of data caused by charging the surface. Very good shape reproducibility of the intensity ratio vs depth profiles was revealed. Therefore, normalized intensity ratios can be used for calibration.