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Effects of Palladium Dispersions on Gas‐Sensitive Conductivity of Semiconducting Ga 2 O 3 Thin‐Film Ceramics
Author(s) -
Bausewein Andreas,
Hacker Birgitta,
Fleischer Maximilian,
Meixner Hans
Publication year - 1997
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1997.tb02832.x
Subject(s) - partial pressure , ceramic , scanning electron microscope , materials science , analytical chemistry (journal) , palladium , thin film , annealing (glass) , conductivity , electrical resistivity and conductivity , mineralogy , oxygen , chemistry , composite material , nanotechnology , catalysis , chromatography , biochemistry , organic chemistry , engineering , electrical engineering
The gas sensitivity of Ga 2 O 3 thin‐film n ‐type conductors was investigated at temperatures of 500–1000°C. Palladium dispersions whose particle sizes are dependent on the preceding annealing processes were deposited by a wet‐chemical technique onto Ga 2 O 3 thin‐film ceramics. The palladium clusters and their temperature‐dependent growth were detected using scanning electron microscopy micrographs and X‐ray photoemission spectroscopy measurements. The effect of the palladium dispersions on the gas‐sensitive behavior of the Ga 2 O 3 ceramics was investigated in various O 2 /H 2 mixtures in the N 2 carrier gas at 700°C. The conductivity of the ceramics treated in this way was dependent on the O 2 partial pressure, as well as on the H 2 partial pressure of the surrounding gas atmosphere. The ceramic conductivity can be described as a function of the O 2 :H 2 ratio, in accordance with the relation σ( p O 2 / p H 2 /) −1/3 .