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Synthesis Routes and Characterization of High‐Purity, Single‐Phase Gallium Nitride Powders
Author(s) -
Balkaş Cengiz M.,
Davis Robert F.
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08977.x
Subject(s) - gallium , tube furnace , gallium nitride , materials science , ammonia , nitride , analytical chemistry (journal) , phase (matter) , gallium oxide , inorganic chemistry , chemistry , metallurgy , nanotechnology , layer (electronics) , chromatography , organic chemistry
Synthesis of high‐purity, single‐phase gallium nitride powder has been achieved in a hot‐wall tube furnace via (i) the reaction of gallium with ammonia (NH 3 ) and (ii) the conversion of gallium oxide (Ga 2 O 3 ). For complete reaction, the optimum temperatures, NH 3 flow rates, and boat positions relative to the NH 3 inlet were 975°C, 400 standard cubic centimeters per minute (sccm), and 50 cm, respectively, for the gallium‐NH 3 reaction, and 1050°C, 500 sccm, and 50 cm, respectively, for the Ga 2 O 3 conversion. Polyhedra of various shapes were obtained from both processes; some rod‐shaped crystals also were observed in the material derived from Ga 2 O 3 .