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Processing of a Novel Multilayered Silicon Nitride
Author(s) -
Shigegaki Yasuhiro,
Brito Manuel E.,
Hirao Kiyoshi,
Toriyama Motohiro,
Kanzaki Shuzo
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08959.x
Subject(s) - whiskers , materials science , porosity , sintering , porous silicon , silicon nitride , composite material , shrinkage , nitride , anisotropy , silicon , layer (electronics) , porous medium , metallurgy , optics , physics
A new type of silicon nitride with a layered structure of alternating dense and porous layers was obtained by addition of β‐Si 3 N 4 whiskers to the porous layers. The materials consisted of dense layers 60 μm thick and porous layers 40 μm thick with a final porosity of about 30%. Highly anisotropic shrinkage behavior was observed during sintering. A large addition of whiskers to the porous layers resulted in layers with well‐oriented and tightly tangled elongated grains, where porosity is represented by anisotropic shaped pores.