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Thermoelectric Properties of Homologous Compounds in the ZnO–In 2 O 3 System
Author(s) -
Ohta Hiromichi,
Seo WonSeon,
Koumoto Kunihito
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08958.x
Subject(s) - figure of merit , thermoelectric effect , seebeck coefficient , sintering , thermal conductivity , materials science , electrical resistivity and conductivity , thermoelectric materials , composite material , optoelectronics , thermodynamics , electrical engineering , physics , engineering
Homologous compounds of (ZnO) m In 2 O 3 (m = integer) with layered structures were synthesized by reaction‐sintering a mixed powder of ZnO and In 2 O 3 at 1823 K for 2 h in air, and their thermoelectric properties, i.e., electrical conductivity, Seebeck coefficient, and thermal conductivity, were measured at 500 to 1100 K. Their thermoelectric figure of merit depended on the composition, and an optimum value of m apparently existed giving the largest figure of merit.