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Solid‐Liquid Reaction in the Si 3 N 4 ‐AlN‐Y 2 O 3 System under 1 MPa of Nitrogen
Author(s) -
Huang ZhenKun,
Tien TsengYing
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08793.x
Subject(s) - eutectic system , phase diagram , ternary operation , nitrogen , materials science , melting temperature , ternary numeral system , analytical chemistry (journal) , binary system , phase (matter) , crystallography , binary number , chemistry , microstructure , metallurgy , arithmetic , mathematics , organic chemistry , chromatography , computer science , composite material , programming language
The melting behaviors of selected compositions in the Si 3 N 4 ‐AlN‐Y 2 O 3 system were determined under 1 MPa of nitrogen. The phase diagrams of the ternary and their binary systems are presented. The lowest melting composition of the ternary system contains 15 mol % Si 3 N 4 , 25 mol % AIN, and 60 mol % Y 2 O 3 and has a melting temperature of 1650°C. The binary eutectic compositions and temperatures are 15 mol % Si 3 N 4 and 85 mol % Y 2 O 3 at 1720°C, and 20 mol % AIN and 80 mol% Y 2 O 3 at 1730°C.