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Links between Electrical and Optical Fatigue in Pb (Zr,Ti)O 3 Thin Films
Author(s) -
Warren William L.,
Dimos Duane,
AlShareef Husam N.,
Raymond Mark V.,
Turtle Bruce A.,
Pike Gordon E.
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08792.x
Subject(s) - materials science , polarization (electrochemistry) , thin film , ferroelectricity , capacitor , optoelectronics , trapping , band gap , biasing , voltage , nanotechnology , electrical engineering , chemistry , dielectric , ecology , engineering , biology
Switchable polarization can be significantly suppressed in ferroelectric (FE) materials by electrical or optical processes. Electrical suppression can occur by subjecting the FE to repeated polarization reversals; optical suppression can occur while biasing the FE near the switching threshold and illuminating with bandgap light. A link between the two processes in Pb(Zr,Ti)O 3 (PZT) thin film capacitors is demonstrated by showing a relationship between the amount of the suppressed polarization induced by the two methods. This observation suggests that the optical method may be a useful, simple, and time‐saving probe of a material's susceptibility to fatigue. These results further support the view that polarization suppression in PZT thin films induced by electrical fatigue largely involves electronic charge trapping.

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