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Atmosphere Control of Interface Migration and Its Effect on Dielectric Property of CuO‐Infiltrated Strontium Titanate
Author(s) -
Jeon JaeHo,
Kim Joo Seon,
Kang SukJoong L.,
Yang Myung Seung
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08756.x
Subject(s) - strontium titanate , materials science , dielectric , sintering , infiltration (hvac) , reducing atmosphere , composite material , atmosphere (unit) , doping , mineralogy , metallurgy , chemistry , optoelectronics , physics , thermodynamics
The control of interface migration and its effect on dielectric properties of SrTiO 3 based materials have been investigated. SrTiO 3 specimens with or without Nb 2 O 5 doping were prepared, and the atmospheres of sintering and heat treatment were varied during the processing. It has been demonstrated that the change in defect structure at the interface of Nb‐doped SrTiO 3 grains by atmosphere change was the cause of interface migration observed during CuO infiltration or heat treatment. The interface migration caused by sintering in a reducing atmosphere and infiltration in air could be suppressed by preoxidizing grain interfaces before the CuO infiltration in air. The suppression of migration increased the effective dielectric constant of the material.