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Silicon Nitride Oxidation Based on Oxynitride Interlayers with Graded Stoichiometry
Author(s) -
Sheldon Brian W.
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08742.x
Subject(s) - silicon oxynitride , diffusion , oxygen , stoichiometry , nitrogen , kinetics , materials science , nitride , silicon nitride , chemical engineering , silicon , layer (electronics) , inorganic chemistry , chemistry , nanotechnology , thermodynamics , metallurgy , engineering , physics , organic chemistry , quantum mechanics
The oxidation kinetics of Si 3 N 4 were modeled by describing the simultaneous diffusion and reaction of interstitial oxygen that is believed to occur inside of the silicon oxynitride interlayer. The oxynitride was assumed to have a variable composition, and oxidation was described as a reaction where interstitial oxygen is incorporated into the network structure of the oxynitride and nitrogen is removed. It was assumed that both the diffusion coefficient and the solubility of interstitial oxygen decrease as the nitrogen content of the network structure increases. The results accurately describe both the formation of an oxynitride layer during oxidation, and the relatively slow oxidation kinetics of Si 3 N 4 (compared to Si and SiC).