Premium
Kinetics of Silicon Monoxide Ammonolysis for Nanophase Silicon Nitride Synthesis
Author(s) -
Lin Dahcheng,
Kimura Shoichi
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08730.x
Subject(s) - silicon monoxide , materials science , silicon nitride , amorphous solid , chemical engineering , whiskers , silicon , nitride , crystallization , nanocrystalline silicon , amorphous silicon , crystalline silicon , nanotechnology , composite material , crystallography , metallurgy , chemistry , layer (electronics) , engineering
Silicon monoxide vapor generated from Si/SiO 2 mixed‐powder compacts was used with NH 3 to synthesize silicon nitride in a tubular flow reactor operated at temperatures in the range of 1300°‐1400°C. The ammonolysis of SiO with excess NH 3 was very rapid, yielding three different types of silicon nitride at different longitudinal locations in the reactor: amorphous nanophase powder of an average size of about 20 nm, amorphous whiskers of a few micrometers in diameter, and α‐polycrystals. The amorphous products were heat‐treated for crystallization at temperatures between 1300° and 1560°C in a stream of dissociated NH 3 , N 2 , or N 2 /H 2 mixture gas. When dissociated NH 3 was used, nanophase powder was crystallized at 1300°C. The yield of nanophase silicon nitride from SiO varied from 13% to 43%, depending on operating conditions.