Premium
Kinetics of Thermal Oxidation of Silicon Nitride Powders
Author(s) -
Butt Darryl P.,
Albert Diane,
Taylor Thomas N.
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08712.x
Subject(s) - kinetics , isothermal process , materials science , thermogravimetric analysis , x ray photoelectron spectroscopy , thermal oxidation , analytical chemistry (journal) , transmission electron microscopy , atmospheric temperature range , activation energy , silicon nitride , silicon , chemistry , chemical engineering , thermodynamics , metallurgy , nanotechnology , organic chemistry , physics , quantum mechanics , engineering
The kinetics of thermal oxidation of H. C. Starck M‐11 and Ube SN‐E10 Si 3 N 4 powders was evaluated in the temperature range 650°‐1200°C using isothermal and nonisothermal thermogravimetric analysis, high‐resolution transmission electron microscopy, and X‐ray photoelectron spectroscopy. Between 700° and 1200°C, the isothermal kinetics was modeled equally well using the Ginstling‐Brounshtein and Zuravlev‐Lesokhin‐Tempeľman equations. Despite their similar particle sizes and surface areas, the two powders exhibited different oxidation kinetics. The activation energies for oxidation of the M‐11 and SN‐E10 powders were determined to be 400 and 540 kJ/mol, respectively, between 1000° and 1200°C, and 230 and 260 kJ/mol, respectively, between 700° and 1000°C. The parabolic rate constants for oxidation of the two powders were comparable to those reported in the literature for monolithic, chemically‐vapor‐deposited Si 3 N 4 at the higher temperatures. At lower temperatures, the oxidation kinetics of the M‐11 powder was nearly linear, whereas the kinetics of the SN‐E10 powder remained power‐law dependent.