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Thermodynamics of the Si‐O‐N System: II, Stability of Si 2 N 2 O(s) by High‐Temperature Mass Spectrometric Vaporization
Author(s) -
Rocabois Philippe,
Chatillon Christian,
Bernard Claude
Publication year - 1996
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1996.tb08597.x
Subject(s) - vaporization , chemistry , evaporation , enthalpy , analytical chemistry (journal) , mass spectrometry , standard enthalpy of formation , standard enthalpy change of formation , knudsen number , thermodynamics , chromatography , physics , organic chemistry
The Si 2 N 2 O(s) compound is vaporized in a multiple Knudsen‐cell connected to a mass spectrometer. Comparison of SiO(g) and N 2 (g) pressures between different samples in the Si‐N‐O system, as triphasic or diphasic mixtures from Si(s), Si 3 N 4 (s), and Si 2 N 2 O(s), allows the determination of the SiO(g) evaporation coefficient and consequently the calculation of the equilibrium pressure of SiO(g). Then the standard enthalpy of formation of Si 2 N 2 O(s) is determined: A f H° m (Si 2 N 2 O, s, 298.15 K) =−887.5 ± 10 kj.mol −1 .